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Swissbit M.2 PCIe BGA E2000 / E2600 M.2 PCIe

EN-20 是具有 DRAM 支持和高達 4 通道操作模式的 PCIe 3.1/NVMe 1.3 產(chǎn)品，提供高性能和短延遲，適用于現(xiàn)代應(yīng)用。提供后臺自適應(yīng)讀取刷新和介質(zhì)掃描的數(shù)據(jù)照管可保持閃存塊的保留，即使對于稀疏的寫入應(yīng)用也可實現(xiàn)較長的產(chǎn)品利用率。E2000 和 E2600 是采用新型高密度 NAND 閃存的最新升級產(chǎn)品。對于高耐久性要求，與 EN-20 相比，采用 3D NAND pSLC 的 EN-26 提供高出十倍的耐久性。

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PCIe M.2 1620 BGA
PCIe Gen 3.1/NVMe 1.3 4 通道
BGA，0.8mm 節(jié)距 16 x 20mm
High density 3D NAND TLC/pSLC
工作溫度范圍 -40°C 至 85°C
數(shù)據(jù)照管
斷電保護
AES 256 加密

Series Name	EN-20 / E2000	EN-26 / E2600
Interface Data Transfer Mode	PCIe Gen 3.1, 4 PCIe lanes NVMe 1.3
Package	BGA 391 ball, 0.8mm pitch
Outline Dimensions	16mm x 20mm x 1.8mm
Flash Type	3D NAND TLC	3D NAND pSLC
Density Range	15-480 GB	5-160 GB
Data Retention	10 years @ life begin 1 year @ life end
Endurance [DWPD]	up to 1.8 / 2.2	up to 54 / 79
Operating Temperature	-40°C to +85°C (up to 95°C TCase)
Storage Temperature	-40°C to +85°C
Performance Sequential Read (MB/s) Sequential Write (MB/s) Random 4KB Read (IOPS Random 4KB Write (IOPS	up to 1,775 / 1,750 up to 750 / 865 up to 140,000 / 140,000 up to 112,000 / 134,000	up to 1,780 / 1,780 up to 758 / 870 up to 140,000 / 89,000 up to 136,000 / 136,000
MTBF	~3,000,000 hours
Voltages	3.3V ±5%, 1.8V ±5%, 0.9V ±5%
Features & Tools	HMB support Dynamic and Static Wear Leveling Page Mode Flash Translation Layer Data Care Management Write Amplification Reduction Power Fail Data Loss Protection In-Field Firmware Update Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T.) AES256 Encryption